China ALD Producător, Furnizor, Fabrică


Thin film preparation processes can be divided into two categories according to their film forming methods: physical vapor deposition (PVD) and chemical vapor deposition (CVD), of which CVD process equipment accounts for a higher proportion. Atomic layer deposition (ALD) is one of the chemical vapor deposition (CVD).


Atomic layer deposition technology (Atomic Layer Deposition, referred to as ALD) is a vacuum coating process that forms a thin film on the surface of a substrate layer by layer in the form of a single atomic layer. ALD technology is currently being widely adopted by the semiconductor industry.


Atomic layer deposition process:


Atomic layer deposition usually includes a cycle of 4 steps, which is repeated as many times as needed to achieve the required deposition thickness. The following is an example of ALD of Al₂O₃, using precursor substances such as Al(CH₃) (TMA) and O₂.


Step 1) Add TMA precursor vapor to the substrate, TMA will adsorb on the substrate surface and react with it. By selecting appropriate precursor substances and parameters, the reaction will be self-limiting.

Step 2) Remove all residual precursors and reaction products.

Step 3) Low-damage remote plasma irradiation of the surface with reactive oxygen radicals oxidizes the surface and removes surface ligands, a reaction that is also self-limiting due to the limited number of surface ligands.

Step 4) Reaction products are removed from the chamber.


Only step 3 differs between thermal and plasma processes, with H₂O being used in thermal processes and O₂ plasma being used in plasma processes. Since the ALD process deposits (sub)-inch-thick films per cycle, the deposition process can be controlled at the atomic scale.



1st Half-CyclePurge2nd Half-CyclePurge



Highlights of Atomic Layer Deposition (ALD):


1) Grow high-quality thin films with extreme thickness accuracy, and only grow a single atomic layer at a time

2) Wafer thickness can reach 200 mm, with typical uniformity <±2%

3) Excellent step coverage even in high aspect ratio structures

4) Highly fitted coverage

5) Low pinhole and particle levels

6) Low damage and low temperature process

7) Reduce nucleation delay

8) Applicable to a variety of materials and processes


Compared with traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), the advantages of ALD are excellent three-dimensional conformality, large-area film uniformity, and precise thickness control, etc. It is suitable for growing ultra-thin films on complex surface shapes and high aspect ratio structures. Therefore, it is widely applicable to substrates of different shapes and does not require control of reactant flow uniformity.


Comparison of the advantages and disadvantages of PVD technology, CVD technology and ALD technology:


PVD technology
CVD technology
ALD technology
Faster deposition rate
Average deposition rate
Slower deposition rate
Thicker film thickness, poor control of nano-level film thickness precision

Medium film thickness

(depends on the number of reaction cycles)

Atomic-level film thickness
The coating has a single directionality
The coating has a single directionality
Good uniformity of large-area film thickness
Poor thickness uniformity
Average step coverage
Best step coverage
Poor step coverage
\ Dense film without pinholes


Advantages of ALD technology compared to CVD technology (Source: ASM)








Vetek Semiconductor is a professional ALD Susceptor products supplier in China. Our ALD Susceptor, SiC coating ALD susceptor and ALD Planetary Susceptor are widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced and customizable ALD Susceptor products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.



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Receptor ALD

Receptor ALD

VeTek Semiconductor este un producător profesionist de susceptor ALD, acoperire CVD SiC, bază de grafit CVD TAC COATING în China. Vetek Semiconductor a dezvoltat și produs în comun baze planetare ALD acoperite cu SiC cu producătorii de sisteme ALD pentru a îndeplini cerințele înalte ale procesului ALD și pentru a distribui uniform fluxul de aer pe substrat. Așteptăm cu nerăbdare să cooperăm în continuare cu dvs.

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Acoperire cu SiC susceptor ALD

Acoperire cu SiC susceptor ALD

În calitate de producător și furnizor profesionist de susceptor ALD de acoperire SiC în China, susceptorul ALD de acoperire SiC de la VeTek Semiconductor este o componentă de suport utilizată în mod special în procesul de depunere a stratului atomic (ALD). Joacă un rol cheie în echipamentul ALD, asigurând uniformitatea și precizia procesului de depunere. Credem că produsele noastre ALD Planetary Susceptor vă pot aduce soluții de înaltă calitate.

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Susceptor planetar ALD

Susceptor planetar ALD

Procesul ALD, înseamnă proces de epitaxie a stratului atomic. Vetek Semiconductor și producătorii de sisteme ALD au dezvoltat și produs susceptori planetari ALD acoperiți cu SiC care îndeplinesc cerințele înalte ale procesului ALD pentru a distribui uniform fluxul de aer pe substrat. În același timp, acoperirea CVD SiC de înaltă puritate a Vetek Semiconductor asigură puritatea procesului. Bine ați venit să discutați despre cooperarea cu noi.

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În calitate de producător și furnizor profesionist ALD în China, avem propria noastră fabrică. Indiferent dacă aveți nevoie de servicii personalizate pentru a satisface nevoile specifice ale regiunii dvs. sau doriți să cumpărați ALD avansat și durabil fabricat în China, ne puteți lăsa un mesaj.
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